Photolithography - Wikipedia
a) The relation of exposure dose and spot width (exposure: 1.5, 1.4... | Download Scientific Diagram
The relation between the photoresist film thickness after the... | Download Scientific Diagram
Lithography
Quantitative analysis and modeling of line edge roughness in near-field lithography: toward high pattern quality in nanofabrication
Method for exposure dose monitoring and control in scanning beam interference lithography
Lithography
The Basics of Microlithography
Willson Research Group - Research - Double Exposure Lithography
Maskless Exposure Technology with Digital Lithography Technology
A comprehensive nano-interpenetrating semiconducting photoresist toward all- photolithography organic electronics | Science Advances
Exposure of Photoresists
Spatial modulation of nanopattern dimensions | EurekAlert!
Simulation result of dose modulation. With decreasing exposure dose,... | Download Scientific Diagram
Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82 - ScienceDirect
Process study and the lithographic performance of commercially available silsesquioxane based electron sensitive resist Medusa 82 - ScienceDirect
Exposure of Photoresists
Achieving unlimited recording length in interference lithography via broad-beam scanning exposure with self-referencing alignment | Scientific Reports
Estimation of resist sensitivity for extreme ultraviolet lithography using an electron beam: AIP Advances: Vol 6, No 8
High throughput optical lithography by scanning a massive array of bowtie aperture antennas at near-field | Scientific Reports
Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method: Journal of Vacuum Science & Technology B: Vol 34, No 4
Photolithography
Dose performance characterization of extreme ultraviolet exposure system using enhanced energy sensitivity by resist contrast method: Journal of Vacuum Science & Technology B: Vol 34, No 4
